DEPRESSED INDEX CLADDING GRADED BARRIER SEPARATE CONFINEMENT SINGLE QUANTUM-WELL HETEROSTRUCTURE LASER

被引：17
作者：
COCKERILL, TM
HONIG, J
DETEMPLE, TA
COLEMAN, JJ
机构：
[1] Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期
关键词：
D O I：
10.1063/1.105887
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we present data for a novel depressed index cladding laser structure which provides reduced perpendicular far-field divergence angle with acceptable low-threshold current densities. Narrow perpendicular divergence angles of 27-degrees full width at half maximum for a nearly perfect Gaussian beam shape have been measured, with a corresponding near-field spot size of 1.30-mu-m. Threshold current densities of 309 A/cm2 are observed for 150-mu-m stripewidth, 780-mu-m long devices with 0.80-mu-m transverse spot sizes. Pulsed output powers for unmounted devices are greater than 0.9 W/uncoated facet.
引用
收藏
页码：2694 / 2696
页数：3
相关论文
共 50 条
[41]   Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures [J].
S. O. Slipchenko ;
D. A. Vinokurov ;
N. A. Pikhtin ;
Z. N. Sokolova ;
A. L. Stankevich ;
I. S. Tarasov ;
Zh. I. Alferov .
Semiconductors, 2004, 38 :1430-1439
[42]   GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FEKETA, D ;
CHAN, KT ;
BALLANTYNE, JM ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660
[43]   HIGH-EFFICIENCY SINGLE QUANTUM WELL GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS FABRICATED WITH MEV OXYGEN ION-IMPLANTATION [J].
XIONG, FL ;
TOMBRELLO, TA ;
WANG, H ;
CHEN, TR ;
CHEN, HZ ;
MORKOC, H ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1989, 54 (08) :730-732
[44]   PERIODIC INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS/ALGAAS QUANTUM-WELL LASERS GROWN BY TEMPERATURE MODULATION MOLECULAR-BEAM EPITAXY [J].
HONG, M ;
CHEN, YK ;
WU, MC ;
VANDENBERG, JM ;
CHU, SNG ;
MANNAERTS, JP ;
CHIN, MA .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :43-45
[45]   Optimization of separate confinement heterostructure waveguide for quantum well lasers [J].
Jain, A ;
Mehta, SK ;
Jain, RK .
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 :199-202
[46]   DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH AS A SINGLE QUANTUM-WELL LASER [J].
TAYLOR, GW ;
COOKE, P .
APPLIED PHYSICS LETTERS, 1990, 56 (14) :1308-1310
[47]   MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine [J].
Dong, JR ;
Teng, JH ;
Chua, SJ ;
Foo, BC ;
Wang, YJ ;
Yin, R .
JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :59-62
[48]   Asymmetric quantum-well heterostructure laser systems [J].
Kononenko, VK .
17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 :702-702
[49]   Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes [J].
Bojarska, Agata ;
Goss, Jakub ;
Stanczyk, Szymon ;
Makarowa, Irina ;
Schiavon, Dario ;
Czernecki, Robert ;
Suski, Tadeusz ;
Perlin, Piotr .
SUPERLATTICES AND MICROSTRUCTURES, 2018, 116 :114-121
[50]   OPTICAL GAIN IN GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].
ZHU, LD ;
ZHENG, BZ ;
XU, ZY ;
XU, JZ ;
FEAK, GAB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1171-1178
12345