PROMINENT THERMALLY STIMULATED CURRENT TRAP IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS

被引：18

作者：

FANG, ZQ

LOOK, DC

机构：

[1] Physics Department, Wright State University, Dayton

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.110346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200-250-degrees-C is T5, with an activation energy of 0.27 eV and most likely related to V(Ga). After an anneal at 300-350-degrees-C, another trap T6star appears, with an activation energy of 0.14 eV and closely identified with V(As) or the complex, V(As)-As(Ga). Proposed defect reactions in this As-rich material include V(Ga) + As(As) --> V(As)-As(Ga), and V(Ga) + As(Ga) --> V(Ga)-As(Ga).

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页码：219 / 221

页数：3

相关论文

共 16 条

[1] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[2]

BLISS DE, 1992, MATER RES SOC SYMP P, V241, P93

[3] INFRARED QUENCHING AND THERMAL RECOVERY OF THERMALLY STIMULATED CURRENT SPECTRA IN GAAS [J].

FANG, ZQ ;

LOOK, DC .

APPLIED PHYSICS LETTERS, 1991, 59 (01) :48-50

[4] PHOTOQUENCHING OF HOPPING CONDUCTION IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM-EPITAXIAL GAAS [J].

FANG, ZQ ;

LOOK, DC .

APPLIED PHYSICS LETTERS, 1992, 61 (12) :1438-1440

[5]

FANG ZQ, 1990, SEMI-INSULATING III-V MATERIALS, TORONTO 1990, P117

[6] STOICHIOMETRY-RELATED DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

KAMINSKA, M ;

WEBER, ER ;

LILIENTALWEBER, Z ;

LEON, R ;

REK, ZU .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :710-713

[7] MICROSTRUCTURE OF ANNEALED LOW-TEMPERATURE-GROWN GAAS-LAYERS [J].

LILIENTALWEBER, Z ;

CLAVERIE, A ;

WASHBURN, J ;

SMITH, F ;

CALAWA, R .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02) :141-146

[8] RECOVERY OF QUENCHED HOPPING CONDUCTION IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT 200-DEGREES-C [J].

LOOK, DC ;

FANG, ZQ ;

SIZELOVE, JR .

PHYSICAL REVIEW B, 1993, 47 (03) :1441-1443

[9] ANNEALING DYNAMICS OF MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 200-DEGREES-C [J].

LOOK, DC ;

WALTERS, DC ;

ROBINSON, GD ;

SIZELOVE, JR ;

MIER, MG ;

STUTZ, CE .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :306-310

[10]

LOOK DC, 1992, IN PRESS SEMIINSULAT