(BEDT-TTF)2GACL4 - STRUCTURE, ELECTRICAL AND MAGNETIC-PROPERTIES

被引：10
作者：
KURMOO, M
ALLAN, M
FRIEND, RH
CHASSEAU, D
BRAVIC, G
DAY, P
机构：
[1] INST LAUE LANGEVIN,F-33042 GRENOBLE,FRANCE
[2] UNIV BORDEAUX 1,CRISTALLOG LAB,F-33405 TALENCE,FRANCE
[3] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源：
SYNTHETIC METALS | 1991年 / 42卷 / 1-2期
关键词：
D O I：
10.1016/0379-6779(91)92032-D
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the synthesis, crystal structure, electrical transport and magnetic properties of (BEDT-TTF)2GaCl4. It crystallises in a triclinic system, P1BAR, a = 31.911, b = 16.580, c = 6.645 angstrom, alpha = 98.15, beta = 85.60, gamma = 90.55-degrees, Z = 4 and V = 3470 angstrom 3 with stacks of twisted dimers. sigma-RT (parallel-to to c) = 0.1 Scm-1 and E(A) = 0.21 eV. The susceptibility is anisotropic; chi-(parallel-to to c) behaves as a 1D antiferromagnetic chain and chi-(perpendicular-to to c) is activated with E(A) approximately 9meV.
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页码：2127 / 2130
页数：4
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