HETEROEPITAXY OF GAAS ON SI AND GE USING ALTERNATING, LOW-ENERGY ION-BEAMS

被引：20
|
作者：
HAYNES, TE
ZUHR, RA
PENNYCOOK, SJ
APPLETON, BR
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 15期
关键词：
D O I：
10.1063/1.100690
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1439 / 1441
页数：3
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