TOTAL DOSE HARDENING OF BURIED INSULATOR IN IMPLANTED SILICON-ON-INSULATOR STRUCTURES

被引：32
作者：
MAO, BY
CHEN, CE
POLLACK, G
HUGHES, HL
DAVIS, GE
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] NORTHROP CORP,DIV ELECTR,HAWTHORNE,CA 90250
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期
关键词：
D O I：
10.1109/TNS.1987.4337538
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1692 / 1697
页数：6
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