DOSE AND ENERGY-DEPENDENCE OF INTERFACE TRAP FORMATION IN CO-60 AND X-RAY ENVIRONMENTS

被引：34
作者：
BENEDETTO, JM
BOESCH, HE
MCLEAN, FB
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期
关键词：
D O I：
10.1109/23.25449
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1260 / 1264
页数：5
相关论文
共 19 条
[1]   THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES [J].
BENEDETTO, JM ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1318-1323
[2]   MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J].
BENEDETTO, JM ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1461-1466
[3]   CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES [J].
BOESCH, HE ;
TAYLOR, TL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1273-1279
[4]   SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE [J].
BOESCH, HE ;
MCLEAN, FB ;
BENEDETTO, JM ;
MCGARRITY, JM ;
BAILEY, WE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1191-1197
[5]   DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J].
DOZIER, CM ;
BROWN, DB ;
THROCKMORTON, JL ;
MA, DI .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4363-4368
[6]   USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS [J].
DOZIER, CM ;
BROWN, DB ;
FREITAG, RK ;
THROCKMORTON, JL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1324-1329
[7]   AN EVALUATION OF LOW-ENERGY X-RAY AND CO-60 IRRADIATIONS OF MOS-TRANSISTORS [J].
DOZIER, CM ;
FLEETWOOD, DM ;
BROWN, DB ;
WINOKUR, PS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1535-1539
[8]   ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS [J].
FLEETWOOD, DM ;
WINOKUR, PS ;
BEEGLE, RW ;
DRESSENDORFER, PV ;
DRAPER, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4369-4375
[9]   EFFECT OF BIAS ON THE RESPONSE OF METAL-OXIDE-SEMICONDUCTOR DEVICES TO LOW-ENERGY X-RAY AND CO-60 IRRADIATION [J].
FLEETWOOD, DM ;
WINOKUR, PS ;
DOZIER, CM ;
BROWN, DB .
APPLIED PHYSICS LETTERS, 1988, 52 (18) :1514-1516
[10]   DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].
GRISCOM, DL .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2524-2533
12