DETERMINATION OF DEEP-LEVEL IMPURITIES AND THEIR EFFECTS ON THE SMALL-SIGNAL AND LF NOISE PROPERTIES OF ION-IMPLANTED GAAS-MESFETS

被引：0

|

作者：

SRIRAM, S ^{[1
]}

KIM, B ^{[1
]}

GHOSH, PK ^{[1
]}

DAS, MB ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：215 / 220

页数：6

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