DETERMINATION OF DEEP-LEVEL IMPURITIES AND THEIR EFFECTS ON THE SMALL-SIGNAL AND LF NOISE PROPERTIES OF ION-IMPLANTED GAAS-MESFETS

被引：0

作者：

SRIRAM, S ^{[1
]}

KIM, B ^{[1
]}

GHOSH, PK ^{[1
]}

DAS, MB ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：215 / 220

页数：6

共 25 条

[1] DEEP-LEVEL AND PROFILE EFFECTS UPON LOW-NOISE ION-IMPLANTED GAAS-MESFETS
TREW, RJ
KHATIBZADEH, MA
MASNARI, NA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 877 - 882
[2] DEPENDENCE OF DEEP-LEVEL PARAMETERS IN ION-IMPLANTED GAAS-MESFETS ON MATERIAL PREPARATION
DHAR, S
BHATTACHARYA, PK
JUANG, FY
HONG, WP
SADLER, RA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 111 - 118
[3] ON THE SPEED AND NOISE PERFORMANCE OF DIRECT ION-IMPLANTED GAAS-MESFETS
FENG, M
LASKAR, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 9 - 17
[4] MODELING DEEP-LEVEL TRAP EFFECTS IN GAAS-MESFETS
SON, I
TANG, TW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 632 - 640
[5] COMMENT ON ON THE SPEED AND NOISE PERFORMANCE OF DIRECT ION-IMPLANTED GAAS-MESFETS
MOLL, N
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) : 115 - 116
[6] INTERFACIAL EFFECTS RELATED TO BACKGATING IN ION-IMPLANTED GAAS-MESFETS
LEIGH, WB
BLAKEMORE, JS
KOYAMA, RY
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1835 - 1841
[7] A STUDY OF THE LOCATION AND NATURE OF DEEP LEVELS IN ION-IMPLANTED GAAS-MESFETS
BLIGHT, SR
THOMAS, H
GEC JOURNAL OF RESEARCH, 1988, 6 (01): : 25 - 36
[8] HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS
FENG, M
EU, VK
KANBER, H
HACKETT, R
ELECTRON DEVICE LETTERS, 1982, 3 (11): : 327 - 329
[9] AVALANCHE BREAKDOWN AND SURFACE DEEP-LEVEL TRAP EFFECTS IN GAAS-MESFETS
LI, CL
BARTON, TM
MILES, RE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (04) : 811 - 816
[10] ORIENTATION AND ION-IMPLANTED TRANSVERSE EFFECTS IN SELF-ALIGNED GAAS-MESFETS
CHEN, CH
PECZALSKI, A
SHUR, MS
CHUNG, HK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1470 - 1481

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