Facilitation of the four-mask process by the double-layered Ti/Si barrier metal for oxide semiconductor TFTs

被引:9
作者
Hino, Aya [1 ]
Maeda, Takeaki [1 ]
Morita, Shinya [1 ]
Kugimiya, Toshihiro [1 ]
机构
[1] Kobe Steel Ltd, Elect Res Lab, Nishi Ku, 1-5-5 Takatsukadai, Kobe, Hyogo 6512271, Japan
关键词
oxide TFT; barrier layer; back-channel-etch-type TFT; four-mask process;
D O I
10.1080/15980316.2012.673509
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at 350 degrees C. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four-or five-mask process is used.
引用
收藏
页码:61 / 66
页数:6
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