PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

被引：22

作者：

Hofmann, M. ^{[1
]}

Kambor, S. ^{[1
]}

Schmidt, C. ^{[1
]}

Grambole, D. ^{[2
]}

Rentsch, J. ^{[1
]}

Glunz, S. W. ^{[1
]}

Preu, R. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, Heidenhofstr 2, D-79110 Freiburg, Germany

[2] Forschungszent Dresden Rossendorf, D-01328 Dresden, Germany

来源：

ADVANCES IN OPTOELECTRONICS | 2008年 / 2008卷

关键词：

D O I：

10.1155/2008/485467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx: H, a-SiNx: H, and a-SiOx: H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) and below 30 cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages V-oc values extracted fromquasi-steady-state photoconductance (QSSPC) measurements above 680mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages. Copyright (C) 2008 M. Hofmann et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

引用

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