COMPARISON OF OPTICAL WAVE-GUIDE LOSSES IN SILICON-ON-INSULATOR

被引：21

作者：

ZINKE, T

FISCHER, U

SPLETT, A

SCHUPPERT, B

PETERMANN, K

机构：

[1] Technische Universität, Berlin Institut für Hochfrequenztechnik, D-10587 Berlin

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 23期

关键词：

OPTICAL WAVE-GUIDES; INTEGRATED OPTICS; SILICON-ON-INSULATOR;

D O I：

10.1049/el:19931356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Waveguide losses in SOI (silicon-on-insulator) material fabricated by different techniques are compared thus enabling us to confirm the theoretical dependence of losses on layer thickness. Single-mode waveguide losses in BE-SOI (bond and etchback-SOI) below 0.5dB/cm are reported for waveguides with cross-sections of several square micrometres.

引用

页码：2031 / 2033

页数：3

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