SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[3] GREINER ME, 1984, THESIS STANFORD U ST

[4] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 527 - 529

[5] STUDY OF ENCAPSULANTS FOR ANNEALING SI-IMPLANTED GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 837 - 840

[6] Shewmon P, 2016, DIFFUSION SOLIDS, DOI [10.1007/978-3-319-48206-4, DOI 10.1007/978-3-319-48206-4]

[7] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 639 - 641

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[3] GREINER ME, 1984, THESIS STANFORD U ST

[4] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 527 - 529

[5] STUDY OF ENCAPSULANTS FOR ANNEALING SI-IMPLANTED GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 837 - 840

[6] Shewmon P, 2016, DIFFUSION SOLIDS, DOI [10.1007/978-3-319-48206-4, DOI 10.1007/978-3-319-48206-4]

[7] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 639 - 641