SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES

被引：45

作者：

KAVANAGH, KL

MAYER, JW

MAGEE, CW

SHEETS, J

TONG, J

WOODALL, JM

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] ADV SEMICOND MAT AMER INC,PHOENIX,AZ 85040

[4] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1208 / 1210

页数：3

共 7 条

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[5] STUDY OF ENCAPSULANTS FOR ANNEALING SI-IMPLANTED GAAS [J].

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[6]

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[7] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE [J].

WOODALL, JM ;

RUPPRECHT, H ;

CHICOTKA, RJ ;

WICKS, G .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :639-641

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