ANODIC-DISSOLUTION OF P-TYPE AND N-TYPE SILICON - KINETIC-STUDY OF THE CHEMICAL MECHANISM

The anodic dissolution of silicon in fluoride containing media has been investigated experimentally. A kinetic model, consistent with the observed dissolution behaviour, is proposed. Important aspects of the reaction scheme are the involvement of the divalent intermediate silicon species and the formation of surface films on the electrode surface. The key feature of the model is its branched nature, defining the various possible reaction pathways available to certain intermediates. The reaction pathway which is operative is determined by the experimental conditions employed, important variables being the dopant type and density, the solution fluoride concentration and the applied electrode potential. © 1990.