A NEW THERMAL-OXIDATION METHOD FOR SEMICONDUCTORS-III-V

被引：4

作者：

TAKAGI, Y

SUGIURA, O

NARUKE, Y

TAKAHASHI, T

MATSUMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 07期

关键词：

D O I：

10.1143/JJAP.23.L490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L490 / L492

页数：3

共 12 条

[1] COMPARISON OF GAAS DEVICE APPROACHES FOR ULTRAHIGH-SPEED VLSI [J].

EDEN, RC .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :5-12

[2]

FIJISADA H, 1984, JPN J APPL PHYS, V23, pL46

[3]

FUJIYASU H, 1977, JPN J APPL PHYS, V16, P1473

[4]

HASEGAWA H, 1981, OYO BUTURI, V12, P1289

[5] ESCA STUDIES OF CHEMICAL-SHIFTS FOR METAL-OXIDES [J].

HOLM, R ;

STORP, S .

APPLIED PHYSICS, 1976, 9 (03) :217-222

[6]

KANAZAWA K, 1981, JPN J APPL PHYS, V20, P1107

[7] COMPOSITION AND STRUCTURE OF THERMAL OXIDES OF INDIUM-PHOSPHIDE [J].

NELSON, A ;

GEIB, K ;

WILMSEN, CW .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4134-4140

[8]

Ohno I., 1979, Oyo Buturi, V48, P924

[9] ANALYSIS OF NATIVE OXIDE-FILMS AND OXIDE SUBSTRATE REACTIONS ON III-V-SEMICONDUCTORS USING THERMOCHEMICAL PHASE-DIAGRAMS [J].

SCHWARTZ, GP .

THIN SOLID FILMS, 1983, 103 (1-2) :3-16

[10] PHASE-COMPOSITION OF THIN OXIDE-FILMS ON INSB [J].

SMIRNOVA, TP ;

GOLUBENKO, AN ;

ZACHARCHUK, NF ;

BELYI, VI ;

KOKOVIN, GA ;

VALISHEVA, NA .

THIN SOLID FILMS, 1981, 76 (01) :11-21

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