ASH3 PREEXPOSURE CONDITIONS FOR GAAS EPITAXIAL-GROWTH ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

FUJITA, K

SHIBA, Y

YAMAMOTO, T

机构：

[1] Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki, Hyogo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期

关键词：

AsH3; pre-exposure; Crystallinity; GaAs on Si; Growth condition; Metalorganic chemical vapor deposition;

D O I：

10.1143/JJAP.29.L534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of AsH3pre-exposure at high temperature on the crystalline quality of GaAs layer grown on Si have been studied using X-ray diffraction. The full width at half-maximum (FWHM) of the (400) reflection from the GaAs layer was affected by the pressure; at 100O°C, the sample with the AsH3pre-exposure at 76 Torr shows narrower FWHM than that with the pre-exposure at 760 Torr. Both samples are analyzed by SIMS. The concentration profile of As and Si around the interface in the sample with lower pressure is sharper than that in the sample with higher pressure. © 1990 IOP Publishing Ltd.

引用

页码：L534 / L536

页数：3

共 50 条

[21] Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (111) by metalorganic chemical vapor deposition
Chernykh, M. Y.
Ezubchenko, I. S.
Mayboroda, I. O.
Zanaveskin, M. L.
JOURNAL OF CRYSTAL GROWTH, 2019, 507 : 200 - 204
[22] GROWTH OF INGAAS/INP QUANTUM-WELL STRUCTURES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
MCCRARY, VR
LEE, JW
CHU, SNG
SLUSKY, SEG
BRELVI, MA
LIVESCU, G
THOMAS, PM
KETELSEN, LJP
ZILKO, JL
MICROELECTRONIC ENGINEERING, 1992, 18 (1-2) : 75 - 88
[23] USE OF PHENYLARSINE IN THE ATMOSPHERIC-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION OF GAAS ON SI(100)
DENNINGTON, NR
WRIGHT, AC
WILLIAMS, JO
JOURNAL OF MATERIALS CHEMISTRY, 1991, 1 (04) : 663 - 666
[24] Understanding of the mechanism of pulsed NH3 growth in metalorganic chemical vapor deposition
Song, Jie
Chen, Danti
Han, Jung
JOURNAL OF CRYSTAL GROWTH, 2015, 415 : 127 - 131
[25] Epitaxial growth of GaN film on (La,Sr)(Al,Ta)O3 (111) substrate by metalorganic chemical vapor deposition
Sumiya, M
Chikyow, T
Sasahara, T
Yoshimura, K
Ohta, J
Fujioka, H
Tagaya, S
Ikeya, H
Koinuma, H
Fuke, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (08): : 5038 - 5041
[26] Influence of High Growth Rate on GaAs-based Solar Cells Grown by Metalorganic Chemical Vapor Deposition
Zhang, Chaomin
Kim, Yeongho
Ebert, Chris
Faleev, Nikolai N.
Honsberg, Christiana B.
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
[27] GROWTH OF (GAAS)1-X(GE2)X BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
VERNON, SM
SANFACON, MM
AHRENKIEL, RK
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 147 - 151
[28] Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition
Huang, Yong
Ryou, Jae-Hyun
Dupuis, Russell D.
Pfluegl, Christian
Capasso, Federico
Sun, Kewei
Fischer, Alec M.
Ponce, Fernando A.
JOURNAL OF CRYSTAL GROWTH, 2011, 316 (01) : 75 - 80
[29] Investigation of Fast Growth GaAs-based Solar Cell on Reusable Substrate by Metalorganic Chemical Vapor Deposition
Zhang, Chaomin
Armour, Eric
Kim, Yeongho
Chikhalkar, Abhinav
Vadiee, Ehsan
King, Richard
Honsberg, Christiana
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 827 - 830
[30] Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition
Hao, MS
Egawa, T
Ishikawa, H
JOURNAL OF CRYSTAL GROWTH, 2005, 285 (04) : 466 - 472

← 1 2 3 4 5 →