ASH3 PREEXPOSURE CONDITIONS FOR GAAS EPITAXIAL-GROWTH ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

The effects of AsH3pre-exposure at high temperature on the crystalline quality of GaAs layer grown on Si have been studied using X-ray diffraction. The full width at half-maximum (FWHM) of the (400) reflection from the GaAs layer was affected by the pressure; at 100O°C, the sample with the AsH3pre-exposure at 76 Torr shows narrower FWHM than that with the pre-exposure at 760 Torr. Both samples are analyzed by SIMS. The concentration profile of As and Si around the interface in the sample with lower pressure is sharper than that in the sample with higher pressure. © 1990 IOP Publishing Ltd.