INVESTIGATION OF NONLOCAL TRANSPORT PHENOMENA IN SMALL SEMICONDUCTOR-DEVICES

被引：37

作者：

GNUDI, A

ODEH, F

RUDAN, M

机构：

[1] IBM T.J. Watson Research Center, Yorktown Heights, New York

[2] Dipartimento di Elettronica Informatica E Sistemistica, Universitá di Bologna, Bologna, 40136, Viale Risorgimento

来源：

EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS | 1990年 / 1卷 / 03期

关键词：

D O I：

10.1002/ett.4460010312

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

The hydrodynamic transport model based fin the generalized momentum and energy equations is used to simulate a n + ‐n‐n + one‐dimensional silicon device and the results are compared with Monte Carlo calculations. The non‐local effects are shown to become important for lengths of the order of a few tenths of a micrometer at applied voltages around 1.0–1.5 V. The hydrodynamic and Monte Carlo velocity and energy are generally in good agreement. Finally, the effects of the thermal conductivity and of the convective terms, in regions where large gradients are present, are investigated. Copyright © 1990 John Wiley & Sons, Ltd.

引用

页码：307 / 312

页数：6

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