PREPARATION AND USE OF A BORON-NITRIDE PRECURSOR AS BINDER FOR THE DENSIFICATION OF BORON-NITRIDE

被引：3

作者：

MAYA, L

ANGELINI, P

机构：

[1] Oak Ridge National Laboratory, Oak Ridge, Tennessee

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 02期

关键词：

binders; boron nitride; densification; precursors; processing;

D O I：

10.1111/j.1151-2916.1990.tb06509.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A precursor of boron nitride was prepared through the partial condensation of 2,4,6‐trichloroborazine and bis‐(trimethylsilyl)acetylene. This reaction was conducted at 100°C and is catalyzed by AlCl3. The condensation product pyrolyzed at 800°C, producing trimethylsilyl chloride as a volatile product and a boron nitride rich residue containing 54 wt% of the initial weight. Mixtures of the precursor and commercial boron nitride were made and hot‐pressed at 800°C and 27.6 MPa. A maximum density of 1.84 g/cm3 is reached at a loading corresponding to the deposition of 13 wt% residue derived from the precursor. Examination by analytical electron microscopy, including X‐ray energy dispersive spectroscopy and electron energy loss spectroscopy analyses, revealed the location of material derived from the precursor in BN‐binder composites through the presence of residual aluminum, silicon, and carbon. Crystallization of boron nitride from the precursor appears to have taken place, as deduced from the morphology of the phases observed and association with residual elements present in the binder. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：297 / 302

页数：6

共 19 条

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