RECENT DEVELOPMENTS IN METALORGANIC PRECURSORS FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：31
|
作者：
JONES, AC
RUSHWORTH, SA
AULD, J
机构：
[1] Epichem Limited, Wirral, Merseyside L62 3QF, Power Road, Bromborough
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)00469-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Volatile metalorganic compounds are finding an increasing application in the deposition of metals and semiconductors by metalorganic chemical vapour deposition (MOCVD). In this paper, the use of some new precursor systems in the growth of selected metals and alloys is reviewed with emphasis being placed on precursor chemistry in the gas phase and at the growth surface.
引用
收藏
页码：503 / 510
页数：8
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