MODEL OF THERMOELECTRIC RADIATION SENSORS MADE BY CMOS AND MICROMACHINING

被引：30

作者：

ELBEL, T

LENGGENHAGER, R

BALTES, H

机构：

[1] FACHHSCH HANOVER,HANNOVER,GERMANY

[2] SWISS FED INST TECHNOL,PHYS ELECTR LAB,CH-8093 ZURICH,SWITZERLAND

[3] PHYS TECH BUNDESANSTALT,W-3300 BRAUNSCHWEIG,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 35卷 / 02期

关键词：

D O I：

10.1016/0924-4247(92)80147-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of thermopile infrared detectors on CMOS silicon oxide cantilever beams isolated by post-processing anisotropic etching is assessed by an analytical model. The sensitivity and detectivity are calculated for a variety of device geometries. An optimal design with a predicted sensitivity of 20 V/W for a receiving area of 0.5 mm2 is proposed.

引用

页码：101 / 106

页数：6

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