BAND TAIL CONDUCTION IN ZN-DOPED GAAS

被引：3
作者：
NEUMANN, H [1 ]
JACOBS, B [1 ]
HORIG, W [1 ]
机构：
[1] VEB WERK FERNSEHELEKTRON,O-1060 BERLIN,GERMANY
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1990年 / 25卷 / 03期
关键词：
D O I：
10.1002/crat.2170250318
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The electrical parameters of Zn‐doped GaAs liquid phase epitaxial layers are determined in the temperature range from 77 to 300 K by Hall effect and resistivity measurements. An analysis of the experimental data yields an ionization energy of 30.4 meV for the Zn acceptor in GaAs in the dilute limit of acceptor concentration. For the Mott transition a critical hole concentration of about 6 · 1017 cm−3 is estimated. It is found that the temperature dependence of the electrical parameters is essentially influenced by band tail conduction effects at doping levels above the Mott transition. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：343 / 348
页数：6
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