A METAL-GATE SELF-ALIGNED MOSFET USING NITRIDE OXIDE

被引：7

作者：

SCHMIDT, MA ^{[1
]}

RAFFEL, JI ^{[1
]}

TERRY, FL ^{[1
]}

SENTURIA, SD ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期

关键词：

D O I：

10.1109/T-ED.1985.21991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：643 / 648

页数：6

共 50 条

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[7] FinFET - A self-aligned double-gate MOSFET scalable to 20 nm [J].

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[8] Future of Planar Self-Aligned Block Oxide Based MOSFET Technology [J].

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[10] Bower, inventor of self-aligned gate MOSFET, inducted into the National Inventors Hall of Fame [J].

不详 .

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