A METAL-GATE SELF-ALIGNED MOSFET USING NITRIDE OXIDE

被引：7
|
作者：
SCHMIDT, MA [1 ]
RAFFEL, JI [1 ]
TERRY, FL [1 ]
SENTURIA, SD [1 ]
机构：
[1] MIT,CAMBRIDGE,MA 02139
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期
关键词：
D O I：
10.1109/T-ED.1985.21991
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：643 / 648
页数：6
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