PHOTOCURRENT MULTIPLICATION IN ION-IMPLANTED LATERAL IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICE PHOTODETECTORS

被引：19
作者：
BULMAN, GE
MYERS, DR
ZIPPERIAN, TE
DAWSON, LR
WICZER, JJ
BIEFELD, RM
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期
关键词：
D O I：
10.1063/1.96020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：733 / 735
页数：3
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