THE CHEMISTRY OF SOLID-STATE ELECTRONICS

被引:25
作者
YABLONOVITCH, E
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D O I
10.1126/science.246.4928.347
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
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页码:347 / 351
页数:5
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共 25 条
[1]  
[Anonymous], [No title captured]
[2]   KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J].
ASPNES, DE ;
COLAS, E ;
STUDNA, AA ;
BHAT, R ;
KOZA, MA ;
KERAMIDAS, VG .
PHYSICAL REVIEW LETTERS, 1988, 61 (24) :2782-2785
[3]   STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].
ATALLA, MM ;
TANNENBAUM, E ;
SCHEIBNER, EJ .
BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783
[4]   INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
BURROWS, VA ;
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
CHRISTMAN, SB .
APPLIED PHYSICS LETTERS, 1988, 53 (11) :998-1000
[5]  
CARTER FL, 1982, MOL ELECTRONIC DEVIC
[6]  
DEAL BE, 1966, SEMICOND PROD SOLID, V9, P25
[7]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[9]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[10]   HIGH-EFFICIENCY GAAS THIN-FILM SOLAR-CELLS BY PEELED FILM TECHNOLOGY [J].
KONAGAI, M ;
SUGIMOTO, M ;
TAKAHASHI, K .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :277-280