THE CHEMISTRY OF SOLID-STATE ELECTRONICS

[1] [Anonymous], [No title captured]

[2] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (24) : 2782 - 2785

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[4] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 998 - 1000

[5] CARTER FL, 1982, MOL ELECTRONIC DEVIC

[6] DEAL BE, 1966, SEMICOND PROD SOLID, V9, P25

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[9] SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (18) : 1972 - 1975

[10] HIGH-EFFICIENCY GAAS THIN-FILM SOLAR-CELLS BY PEELED FILM TECHNOLOGY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 277 - 280

[1] [Anonymous], [No title captured]

[2] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (24) : 2782 - 2785

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[4] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 998 - 1000

[5] CARTER FL, 1982, MOL ELECTRONIC DEVIC

[6] DEAL BE, 1966, SEMICOND PROD SOLID, V9, P25

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[9] SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (18) : 1972 - 1975

[10] HIGH-EFFICIENCY GAAS THIN-FILM SOLAR-CELLS BY PEELED FILM TECHNOLOGY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 277 - 280