MICROSTRUCTURE OF GRAPPE DEFECTS IN INP

被引：12

作者：

AUGUSTUS, PD

STIRLAND, DJ

YATES, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90258-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：121 / 128

页数：8

共 13 条

[1]

ALJASSIM MM, 1981, I PHYS C SER, V60, P357

[2] A STUDY OF INCLUSIONS IN INDIUM-PHOSPHIDE [J].

AUGUSTUS, PD ;

STIRLAND, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :614-621

[3] ETCH FEATURES IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

BROWN, GT ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (10) :2539-2549

[4] DISLOCATION CLUSTERS IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) :461-469

[5] NONRADIATIVE REGIONS IN GAINASP INP DOUBLE HETEROSTRUCTURE LASER MATERIAL - CORRELATION WITH DISLOCATION CLUSTERS IN THE SUBSTRATES [J].

ELLIOTT, CR ;

REGNAULT, JC ;

WAKEFIELD, B .

ELECTRONICS LETTERS, 1982, 18 (01) :7-8

[6] THE DETECTION OF STRUCTURAL DEFECTS IN INDIUM-PHOSPHIDE BY ELECTROCHEMICAL ETCHING [J].

ELLIOTT, CR ;

REGNAULT, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :113-116

[7]

ELLIOTT CR, 1981, I PHYS C SER, V60, P365

[8]

ELLIOTT CR, 1983, I PHYS C SER, V65, P553

[9]

GILES PL, 1981, I PHYS C SER, V56, P669

[10] DISLOCATION CLIMB MODEL IN COMPOUND SEMICONDUCTORS WITH ZINC BLENDE STRUCTURE [J].

PETROFF, PM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :461-463

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