共 50 条
[21]
TEMPERATURE-DEPENDENCE OF THE RELAXATION-TIME OF THE WAVEFUNCTION PHASE IN ANTIMONY-DOPED GERMANIUM
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1984, 18 (01)
:95-97
[23]
Thermal oxidation of antimony-doped silicon
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2002, 41 (4A)
:1986-1987
[24]
INFRARED ABSORPTION IN ANTIMONY-DOPED TELLURIUM
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1969, 2 (09)
:1149-&
[25]
THERMAL CONDUCTIVITY OF ANTIMONY-DOPED TELLURIUM
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1969, 2 (11)
:1379-&
[28]
OXYGEN DIFFUSION IN ANTIMONY-DOPED SILICON
[J].
APPLIED PHYSICS LETTERS,
1988, 53 (12)
:1068-1070
[29]
MOSSBAUER EFFECT IN ANTIMONY-DOPED SILICON
[J].
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY,
1971, 16 (03)
:419-&