REVERSE ANNEALING STAGES IN QUENCHED ANTIMONY-DOPED GERMANIUM

被引:0
作者
HASHIMOTO, F [1 ]
KAMIURA, Y [1 ]
IWASAKI, S [1 ]
机构
[1] OKAYAMA UNIV,SCH ENGN,OKAYAMA,JAPAN
关键词
D O I
10.1143/JJAP.14.293
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:293 / 294
页数:2
相关论文
共 50 条
[21]   TEMPERATURE-DEPENDENCE OF THE RELAXATION-TIME OF THE WAVEFUNCTION PHASE IN ANTIMONY-DOPED GERMANIUM [J].
POLYANSKAYA, TA ;
KRUKOVSKAYA, LP ;
SHMARTSEV, YV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01) :95-97
[22]   THE OXIDATION-STATE OF ANTIMONY IN ANTIMONY-DOPED RUTILE [J].
BERRY, FJ ;
GOGARTY, PM .
JOURNAL OF SOLID STATE CHEMISTRY, 1988, 73 (02) :588-590
[23]   Thermal oxidation of antimony-doped silicon [J].
Ishikawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4A) :1986-1987
[24]   INFRARED ABSORPTION IN ANTIMONY-DOPED TELLURIUM [J].
VAKULENK.OV ;
GASANGUS.SG .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09) :1149-&
[25]   THERMAL CONDUCTIVITY OF ANTIMONY-DOPED TELLURIUM [J].
POLIKHRO.NG ;
BAGDUEV, GB .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (11) :1379-&
[26]   OXYGEN PRECIPITATION IN ANTIMONY-DOPED SILICON [J].
GUPTA, S ;
MESSOLORAS, S ;
SCHNEIDER, JR ;
STEWART, RJ ;
ZULEHNER, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (04) :443-451
[27]   ANTIMONY-DOPED TITANIUM OXIDE CAPACITORS [J].
MAXWELL, LH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) :C64-C64
[28]   OXYGEN DIFFUSION IN ANTIMONY-DOPED SILICON [J].
WIJARANAKULA, W ;
MATLOCK, JH ;
MOLLENKOPF, H .
APPLIED PHYSICS LETTERS, 1988, 53 (12) :1068-1070
[29]   MOSSBAUER EFFECT IN ANTIMONY-DOPED SILICON [J].
GERSON, R ;
LONG, GJ ;
TEAGUE, JR ;
YAGNIK, CM ;
LAFLEUR, LD .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03) :419-&
[30]   Spin transport in antimony-doped germanium detected using vertical spin-valve structures [J].
Shiihara, Takahiro ;
Yamada, Michihiro ;
Honda, Mizuki ;
Yamada, Atsuya ;
Yamada, Shinya ;
Hamaya, Kohei .
APPLIED PHYSICS EXPRESS, 2020, 13 (02)