共 50 条
- [1] POLARIZATION DEPENDENCE OF THE EXCITONIC PHOTO-EMF AT THE GALLIUM-ARSENIDE METAL INTERFACE FIZIKA TVERDOGO TELA, 1990, 32 (03): : 950 - 952
- [2] DEPENDENCE OF RESISTANCE OF NONRECTIFYING CONTACTS ON TEMPERATURE AND IMPURITY CONCENTRATION IN GALLIUM ARSENIDE INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1969, (06): : 1596 - +
- [4] DETERMINATION OF IMPURITY CONCENTRATION FROM HALL-EFFECT AND HOLE MOBILITY IN ZINC-DOPED GALLIUM-ARSENIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1641 - &
- [6] INFLUENCE OF AN OSCILLATORY DEMBER EMF ON THE PHOTO-EMF SPECTRA OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1052 - 1054
- [7] INFLUENCE OF AN OSCILLATORY DEMBER emf ON THE PHOTO-emf SPECTRA GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (09): : 1052 - 1054
- [8] IMPURITY-CONCENTRATION DEPENDENCE OF THE THERMAL IONIZATION ENERGY OF GALLIUM ATOMS IN GERMANIUM CRYSTALS. Soviet physics. Semiconductors, 1984, 18 (11): : 1293 - 1294