EPITAXIAL GEXSI1-X SI(100) STRUCTURES PRODUCED BY PULSED LASER MIXING OF EVAPORATED GE ON SI(100) SUBSTRATES

被引：54
作者：
ABELSON, JR
SIGMON, TW
KIM, KB
WEINER, KH
机构：
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
[2] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
[3] UNIV CALIF LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94550
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 03期
关键词：
D O I：
10.1063/1.99528
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：230 / 232
页数：3
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