DOSE-RATE EFFECTS IN PERMANENT THRESHOLD VOLTAGE SHIFTS OF MOS-TRANSISTORS

被引：7
|
作者：
MAIER, RJ [1 ]
TALLON, RW [1 ]
机构：
[1] USAF, WEAPONS LAB, KIRTLAND AFB, NM 87117 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期
关键词：
D O I：
10.1109/TNS.1975.4328108
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2214 / 2218
页数：5
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