DOSE-RATE EFFECTS IN PERMANENT THRESHOLD VOLTAGE SHIFTS OF MOS-TRANSISTORS

被引：7

作者：

MAIER, RJ ^{[1
]}

TALLON, RW ^{[1
]}

机构：

[1] USAF, WEAPONS LAB, KIRTLAND AFB, NM 87117 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期

关键词：

D O I：

10.1109/TNS.1975.4328108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2214 / 2218

页数：5

共 50 条

[1] ON THE SHIFT OF THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS-TRANSISTORS
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