PROPERTIES OF CDTE/INSB HETEROSTRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

MYERS, TH ^{[1
]}

LO, Y ^{[1
]}

SCHETZINA, JF ^{[1
]}

JOST, SR ^{[1
]}

机构：

[1] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9232 / 9234

页数：3

共 9 条

[1] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C) [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1441-&

[2]

CASTAGNE R, 1971, SURF SCI, V28, P557

[3] DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIES [J].

CHANG, CC ;

JOHNSON, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) :1368-1373

[4] MASS SPECTROMETRIC AND KNUDSEN-CELL VAPORIZATION STUDIES OF GROUP 2B-6B COMPOUNDS [J].

GOLDFINGER, P ;

JEUNEHOMME, M .

TRANSACTIONS OF THE FARADAY SOCIETY, 1963, 59 (492) :2851-&

[5] INTERFACE PROPERTIES OF INSB MIS STRUCTURES [J].

KIM, JC .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04) :200-207

[6] CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].

LANGAN, JD ;

VISWANATHAN, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477

[7] OPTICAL-PROPERTIES OF POLYCRYSTALLINE CDTE-FILMS [J].

MYERS, TH ;

EDWARDS, SW ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4231-4237

[8]

WEI CY, 1980, IEEE T ELECTRON DEV, V27, P170

[9]

ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

← 1 →