RECOMBINATION OF CARRIERS IN N-TYPE INAS AT 77 DEGREESK

被引：0

作者：

BLAUTBLACHEV, AN ^{[1
]}

BALAGUROV, LA ^{[1
]}

KARATAEV, VV ^{[1
]}

OMELYANOVSKII, EM ^{[1
]}

机构：

[1] MOSCOW RARE MET IND RES & DESIGN INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：515 / 516

页数：2

共 15 条

[1]

BARYSHEV NS, 1964, SOV PHYS-SOLID STATE, V6, P2410

[2]

BORELLO SR, 1966, J APPL PHYS, V37, P4899

[3] CARRIER LIFETIMES IN EPITAXIAL INAS [J].

DALAL, VL ;

HICINBOTHEM, WA ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1974, 24 (04) :184-185

[4] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].

DIXON, JR ;

ELLIS, JM .

PHYSICAL REVIEW, 1961, 123 (05) :1560-&

[5] SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS [J].

DUMKE, WP .

PHYSICAL REVIEW, 1957, 105 (01) :139-144

[6] CARRIER RECOMBINATION IN INDIUM ARSENIDE [J].

HOLLIS, JEL .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (571P) :151-&

[7]

IGLITSIN MI, 1966, FIZ TVERD TELA+, V7, P2770

[8]

MESSERER MA, 1975, SOV PHYS SEMICOND+, V8, P1491

[9]

MIKHAILOVA MP, 1964, SOV PHYS-SOL STATE, V5, P1685

[10]

MIKHAILOVA MP, 1964, SOV PHYS SOLID STATE, V6, P1215

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