DOSE LOSS IN PHOSPHORUS IMPLANTS DUE TO TRANSIENT DIFFUSION AND INTERFACE SEGREGATION

被引：57

作者：

GRIFFIN, PB

CROWDER, SW

KNIGHT, JM

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.114543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For implanted phosphorus in the dose range of 5x10(13)/cm(2)-4x10(14)/cm(2), up to half the implanted dose may be lost during low thermal budget anneals due to transient diffusion and anomalous segregation at the Si-SiO2 interface. The phosphorus atoms, rendered mobile by the implant damage, stick in the oxide near the interface where they are electrically inactive and can be removed by stripping the surface oxide. Such a dose loss needs to be accounted for in a typical device fabrication process. (C) 1995 American Institute of Physics.

引用

页码：482 / 484

页数：3

共 11 条

[1] BARTON RW, 1992, THESIS STANFORD U
[2] GRIFFIN P, UNPUB
[3] A MODEL FOR PHOSPHORUS SEGREGATION AT THE SILICON SILICON DIOXIDE INTERFACE
LAU, F
MADER, L
MAZURE, C
WERNER, C
ORLOWSKI, M
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (06): : 671 - 675
[4] THE PROFILE OF ELECTRICALLY ACTIVE PHOSPHORUS IN SILICON AFTER THERMAL-OXIDATION
NICOLLIAN, EH
CHATTERJEE, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (12) : 3580 - 3584
[5] ORLOWSKI M, 1980, APPL PHYS LETT, V55, P1762
[6] TRANSIENT DIFFUSION OF LOW-CONCENTRATION-B IN SI DUE TO SI-29 IMPLANTATION DAMAGE
PACKAN, PA
PLUMMER, JD
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (18) : 1787 - 1789
[7] ANTIMONY AND ARSENIC SEGREGATION AT SI-SIO2 INTERFACES
SAIHALASZ, GA
SHORT, KT
WILLIAMS, JS
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 285 - 287
[8] CHARACTERIZATION OF PHOSPHORUS PILE-UP AT THE SIO2/SI INTERFACE
SATO, Y
WATANABE, M
IMAI, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (09) : 2679 - 2682
[9] DETECTION OF PHOSPHORUS PILEUP AT SIO2/SI INTERFACE
SATO, Y
IMAI, K
YOMEZAWA, H
SHIGEMATSU, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (12) : L176 - L177
[10] STUDIES OF PHOSPHORUS PILE-UP AT THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING
SCHWARZ, SA
BARTON, RW
HO, CP
HELMS, CR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1101 - 1106

← 1 2 →