ALUMINUM IMPURITY IN SIO2-SI SEMICONDUCTOR STRUCTURES

被引：0
作者：
DUTOV, AG
KOMAR, VA
SHIRYAEV, SV
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 06期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A neutron activation analysis was combined with a new method of layer-by-layer electrochemical etching of irradiated samples in a study of the concentration and the distribution of aluminum impurities in silicon dioxide-silicon semiconductor structures. The concentration level of aluminum was found to be high and its distribution was extremely nonuniform in the bulk of the structure, with an accumulation mainly at the phase boundaries of silicon dioxide and in surface layers of the silicon plate. The effect of this impurity on the characteristics of semiconductor structures was analyzed.
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页码：543 / 546
页数：4
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