CONTROLLED RF-SPUTTER ETCHING USING ATOMIC-ABSORPTION SPECTROSCOPY

被引:3
作者
BAUER, HJ [1 ]
BOGARDUS, EH [1 ]
机构
[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期
关键词
D O I
10.1116/1.1318698
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1144 / 1147
页数:4
相关论文
共 6 条
[1]   SPECTROSCOPIC MONITOR FOR SPUTTER-ETCHING PROCESSES [J].
BERNSTEIN, T ;
LABUDA, EF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :108-110
[2]   RF SPUTTER ETCHING - A UNIVERSAL ETCH [J].
DAVIDSE, PD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :100-&
[3]  
PALMBERG PW, 1972, HIGH VAC REPT
[4]   INVESTIGATION OF SPUTTERING OF ALUMINUM USING ATOMIC-ABSORPTION SPECTROSCOPY [J].
STIRLING, AJ ;
WESTWOOD, WD .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :742-&
[5]   ENERGY DISTRIBUTION OF SPUTTERED CU ATOMS [J].
STUART, RV ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1819-&
[6]  
TSUI RTC, 1967, SEMICOND PROD SOLID, V10, P33