CONTROLLED RF-SPUTTER ETCHING USING ATOMIC-ABSORPTION SPECTROSCOPY

被引：3

作者：

BAUER, HJ ^{[1
]}

BOGARDUS, EH ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.1318698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1144 / 1147

页数：4

相关论文

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[2] RF SPUTTER ETCHING - A UNIVERSAL ETCH
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[3] PALMBERG PW, 1972, HIGH VAC REPT
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[5] ENERGY DISTRIBUTION OF SPUTTERED CU ATOMS
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[6] TSUI RTC, 1967, SEMICOND PROD SOLID, V10, P33