FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS

被引：44

作者：

HSU, TM ^{[1
]}

TIEN, YC ^{[1
]}

LU, NH ^{[1
]}

TSAI, SP ^{[1
]}

LIU, DG ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30043,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 03期

关键词：

D O I：

10.1063/1.351780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-delta-doped GaAs (N2D almost-equal-to 10(11) cm-2) samples grown by molecular-beam epitaxy are investigated by using photoreflectance spectroscopy. The oscillations observed above the GaAs fundamental band gap are attributed to the Franz-Keldysh effect in the region between the delta-doped layer and the crystal surface. This ascription is confirmed by detailed studies through varying the cap thickness (250-2500 angstrom), temperature (10-450 K), and laser pump power (0.05-7 mW/cm2). The surface potential deduced from the Franz-Keldysh oscillations is found to be temperature and laser pump power dependent, which is explained by taking the surface photovoltaic effect into account. The surface Fermi level has been measured by this method and is found to have the value 0.73+/-0.02 V.

引用

页码：1065 / 1069

页数：5

共 22 条

[1]

Aspnes D. E., 1980, HDB SEMICONDUCTORS, V2

[2] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].