ON THE PRACTICAL APPLICATIONS OF MBE SURFACE PHASE-DIAGRAMS

This paper reports surface phase diagrams for (100) GaAs and (100) InAs. In GaAs, growth rates from 0. 07 to 3. 0 mu m/h, As//4:Ga flux ratios from 0. 25:1 to 100:1 and growth temperatures from 300 degree C to 800 degree C were used, covering the whole range of growth conditions of practical use in MBE. Results on the nucleation of the (100) InAs/GaAs heterojunctions are also presented. The correlation between material properties, surface reconstruction and growth conditions is discussed for both GaAs and homo- and heteroepitaxial InAs. The emphasis is on the practical application of the results as an aid to optimizing (and reproducing) MBe growth conditions with reasonable efficiency.