TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE

被引：43
作者：
ANGELUCCI, R
NEGRINI, P
SOLMI, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期
关键词：
D O I：
10.1063/1.97305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1468 / 1470
页数：3
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  • [1] FAHEY P, 1984, APPL PHYS LETT, V44, P772
  • [2] FAHEY P, 1986, SEMICONDUCTOR SILICO, V86, P571
  • [3] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON
    FAIR, RB
    WORTMAN, JJ
    LIU, J
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2387 - 2394
  • [4] FINETTI M, 1979, IEEE T SOLID STATE E, V3, P65
  • [5] GUIMARAES S, 1986, PHYS STATUS SOLIDI A, V95, P761
  • [6] RAPID THERMAL ANNEALING OF BORON-IMPLANTED SILICON USING AN ULTRAHIGH POWER ARC LAMP
    HODGSON, RT
    DELINE, VR
    MADER, S
    GELPEY, JC
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 589 - 591
  • [7] HOYT JL, 1986, MATER RES SOC S P, V52, P15
  • [8] HU SM, 1985, VLSI SCI TECHNOLOGY, P465
  • [9] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON
    KALISH, R
    SEDGWICK, TO
    MADER, S
    SHATAS, S
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 107 - 109
  • [10] KOGLER R, NUCL INSTRUM METHODS
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