TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE

被引：43
作者：
ANGELUCCI, R
NEGRINI, P
SOLMI, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期
关键词：
D O I：
10.1063/1.97305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1468 / 1470
页数：3
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