BAND-MIXING EFFECT ON THE EMISSION-SPECTRUM OF MODULATION-DOPED SEMICONDUCTOR QUANTUM WELLS

被引：42

作者：

CHANG, YC ^{[1
]}

SANDERS, GD ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5521

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5521 / 5524

页数：4

共 8 条

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PHYSICAL REVIEW B, 1985, 31 (04) :2069-2079

[3]

Fetter A L, 1971, QUANTUM THEORY MANY

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[5] OPTICAL-PROPERTIES IN MODULATION-DOPED GAAS-GA1-XALXAS QUANTUM WELLS [J].

SANDERS, GD ;

CHANG, YC .

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[6] DIRECT OBSERVATION OF BAND MIXING IN GAAS-(ALXGA1-X)AS QUANTUM HETEROSTRUCTURES [J].

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SHAM, LJ .

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[7]

SOORYAKUMAR R, UNPUB SOLID STATE CO

[8] CORE SPECTRA OF METALS [J].

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