TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS

被引：17

作者：

ABRAHAMS, MS

BUIOCCHI, CJ

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / 28卷 / 06期

关键词：

D O I：

10.1016/0022-3697(67)90207-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：927 / &

共 15 条

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[5]

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[6]

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[7] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

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QUEISSER, HJ ;

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THOMAS, G .

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[8]

FRANCOMBE MH, 1964, SINGLE CRYSTAL FI ED, P281

[9] ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT [J].

HASHIMOTO, H ;

HOWIE, A ;

WHELAN, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) :80-&

[10]

HIRSH PB, 1965, ELECT MICROSCOPY THI, P166

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