EMITTER SIDEWALL JUNCTION CAPACITANCE IN DOUBLE-DIFFUSED TRANSISTORS

被引：2

|

作者：

RUMIN, N

LAWRENCE, H

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 11期

关键词：

D O I：

10.1109/PROC.1966.5220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1606 / &

相关论文

共 50 条

[21] Investigations on double-diffused MOS transistors under ESD zap conditions
Boselli, G
Meeuwsen, S
Mouthaan, T
Kuper, F
MICROELECTRONICS RELIABILITY, 2001, 41 (03) : 395 - 405
[22] TRANSITION-CAPACITANCE CALCULATIONS FOR DOUBLE-DIFFUSED P-N-JUNCTIONS
BHATTACHARYYA, AB
BASAVARAJ, TN
SOLID-STATE ELECTRONICS, 1973, 16 (04) : 467 - 476
[23] MODEL FOR THE LATERAL JUNCTION CONTOUR OF DOUBLE-DIFFUSED GAUSSIAN PROFILES.
Kasley, K.L.
Oleszek, G.M.
Zigadlo, J.P.
IEEE Transactions on Electron Devices, 1984, ED-31 (09) : 1341 - 1343
[24] COMMENTS ON COLLECTOR CAPACITANCE VERSUS COLLECTOR CURRENT FOR A DOUBLE-DIFFUSED TRANSISTOR - REPLY
ARANDJELOVIC, V
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02): : 280 - +
[25] THEORY OF 4-TERMINAL DOUBLE-DIFFUSED FIELD-EFFECT TRANSISTORS
COBBOLD, RSC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (06) : 302 - &
[26] TEMPERATURE-DEPENDENCE OF FT OF SILICON DOUBLE-DIFFUSED BIPOLAR-TRANSISTORS
OOSAKA, F
SOLID-STATE ELECTRONICS, 1978, 21 (04) : 665 - 666
[27] Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions
Boselli, G
Meeuwsen, S
Mouthaan, T
Kuper, F
ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1999, 1999, : 11 - 18
[28] Nanoscale investigation of the silicon carbide double-diffused MOSFET with scanning capacitance force microscopy
Nakajima, Mizuki
Uchida, Yuki
Satoh, Nobuo
Yamamoto, Hidekazu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)
[29] FORWARD AND REVERSE CHARACTERISTICS OF SELF-ALIGNED DOUBLE-DIFFUSED MOS-TRANSISTORS
MCLINTOCK, GA
THOMAS, RE
HOGEBOOM, JG
COBBOLD, RSC
ELECTRONICS LETTERS, 1972, 8 (18) : 463 - +
[30] IMPROVED METHOD FOR CALCULATION OF NET IMPURITY-DOPING PROFILE OF DOUBLE-DIFFUSED TRANSISTORS
DURBIN, F
ELECTRONICS LETTERS, 1971, 7 (10) : 243 - &

← 1 2 3 4 5 →