FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES

被引：107

作者：

BRILLSON, LJ ^{[1
]}

BRUCKER, CF ^{[1
]}

KATNANI, AD ^{[1
]}

STOFFEL, NG ^{[1
]}

DANIELS, R ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 569

页数：6

共 26 条

[1]

Brillson L. J., 1980, Journal of the Physical Society of Japan, V49, P1089

[2] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J].

BRILLSON, LJ ;

MARGARITONDO, G ;

STOFFEL, NG .

PHYSICAL REVIEW LETTERS, 1980, 44 (10) :667-670

[3] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786

[4] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :661-666

[5] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

STOFFEL, NG ;

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841

[6]

BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[8]

BRILLSON LJ, UNPUB

[9]

BROWN FC, 1975, VACUUM ULTRAVIOLET R, P785

[10] REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS [J].

BRUCKER, CF ;

BRILLSON, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :617-622

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