Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

被引：12

作者：

Zhu Xiaming ^{[1
]}

Wu Huizhen ^{[1
,2
]}

Wang Shuangjiang ^{[1
]}

Zhang Yingying ^{[1
]}

Cai Chunfeng ^{[1
]}

Si Jianxiao ^{[1
]}

Yuan Zijian ^{[1
]}

Du Xiaoyang ^{[3
]}

Dong Shurong ^{[3
]}

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China

[3] Zhejiang Univ, Inst Microelect & Photoelect, ESD Lab, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 03期

基金：

中国国家自然科学基金;

关键词：

ZnO; N-doping; resistivity; photoluminescence; thin film transistors;

D O I：

10.1088/1674-4926/30/3/033001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

引用

页数：4

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