LOW THRESHOLD GAXIN1-XP(ALYGA1-Y)0.5IN0.5P STRAINED QUANTUM-WELL LASERS

Strained GaxIn1-xP/(AlyGa1-y)0.5In0.5P quantum well (QW) lasers have been prepared by low pressure organometallic vapor phase epitaxy. By adjusting the QW active region composition and thickness, (300 K pulsed) wavelengths of 617 to 712 nm have been obtained. In the longer wavelength (A > 670 nm) regime, where compressive strain (x < 0.5) is applied, low threshold current density (J(th) = 220 A/cm2) and high characteristic temperature (T0 > 150 K) are demonstrated. For shorter wavelengths, where electron confinement begins to diminish, thresholds are higher and T0 is lower, for both compressive- and tensile-strained (x > 0.5) QWs. At 633 nm, best properties are J(th) = 400 A/cm2 and T0 = 60 K. The characteristic temperature can be improved by using multiple, rather than single, QWs.