HIGH-ENERGY SI IMPLANTATION INTO INP-FE

High-energy Si implantations were performed into InP:Fe at energies ranging from 0.5 to 10 MeV for a dose of 3 x 10(14) cm-2, and at 3 MeV for the dose ranging from 1 x 10(14) to 2 x 10(15) cm-2. The first four statistical moments of the Si-depth distribution, namely range, longitudinal straggle, skewness, and kurtosis, were calculated from the secondary-ion mass spectrometry (SIMS) data of the as-implanted samples. These values were compared with the corresponding TRIM-89 calculated values. SIMS depth profiles were closely fitted by Pearson IV distributions. Multiple implantations in the energy range from 50 keV to 10 MeV were performed to obtain thick n-type layers. Variable temperature/time halogen lamp rapid thermal annealing (RTA) cycles and 735-degrees-C/10-min furnance annealing were used to activate the Si implants. No redistribution of Si was observed for the annealing cycles used in this study. Activations close to 100% were obtained for 3 x 10(14)-cm-2 Si implants in the energy range from 2 to 10 MeV for 875-degrees-C/10-s RTA. Transport equation calculations were used to interpret low activation results for high dose Si implants. Polaron electrochemical C-V profiling was used to obtain carrier concentration depth profiles. The lattice quality of the as-implanted and annealed material was evaluated by performing x-ray rocking curve measurements.