THE TEMPERATURE-DEPENDENCE OF THE EFFECTIVE THRESHOLD ENERGY FOR ATOM DISPLACEMENT IN TANTALUM

被引：2
作者：
SAILE, B [1 ]
机构：
[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 89卷 / 02期
关键词：
D O I：
10.1002/pssa.2210890242
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K143 / K145
页数：3
相关论文
共 50 条
[21]   THE ANISOTROPY OF THE THRESHOLD ENERGY FOR ATOM DISPLACEMENT IN SILVER AND GOLD [J].
SIGLE, W ;
HOHENSTEIN, M ;
SEEGER, A .
PHILOSOPHICAL MAGAZINE LETTERS, 1990, 62 (01) :67-73
[22]   TEMPERATURE-DEPENDENCE OF THE EFFECTIVE MASS OF THE INTERFACE POLARON [J].
LI, YC ;
GU, SW .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (05) :1149-1161
[23]   MICROSCOPIC CALCULATION OF THE TEMPERATURE-DEPENDENCE OF THE EFFECTIVE INTERACTION [J].
CUGNON, J ;
LEJEUNE, A ;
BALDO, M ;
LOMBARDO, U .
NUCLEAR PHYSICS A, 1989, 492 (02) :173-186
[24]   THEORY OF TEMPERATURE-DEPENDENCE OF ROTON ENERGY [J].
TUTTO, I .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1973, 11 (1-2) :77-92
[25]   NEUTRON GAS - TEMPERATURE-DEPENDENCE OF THE EFFECTIVE INTERACTION [J].
BUCHLER, JR ;
DATTA, B .
PHYSICAL REVIEW C, 1979, 19 (02) :494-497
[26]   ANALYSIS OF TEMPERATURE-DEPENDENCE OF CMOS TRANSISTORS THRESHOLD VOLTAGE [J].
PRIJIC, ZD ;
DIMITRIJEV, SS ;
STOJADINOVIC, ND .
MICROELECTRONICS AND RELIABILITY, 1991, 31 (01) :33-37
[27]   TEMPERATURE-DEPENDENCE OF ELECTRON EFFECTIVE MASS IN INSB [J].
KOTELES, ES ;
DATARS, WR .
PHYSICAL REVIEW B, 1974, 9 (02) :568-571
[28]   TEMPERATURE-DEPENDENCE OF THE NUCLEAR SYMMETRY ENERGY [J].
DEAN, DJ ;
KOONIN, SE ;
LANGANKE, K ;
RADHA, PB .
PHYSICS LETTERS B, 1995, 356 (04) :429-433
[29]   THEORY OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF AN INGAASP LASER [J].
HAUG, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :716-718
[30]   TEMPERATURE-DEPENDENCE OF EFFECTIVE OF ELECTRONS IN SILVER SELENIDE [J].
GORBACHEV, VV ;
PUTILIN, IM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04) :578-578
12345