PHOTOLUMINESCENCE STUDY OF ACCEPTORS IN SILICON-DOPED GALLIUM-ARSENIDE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

LIDEIKIS, T

TREIDERIS, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90638-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：790 / 794

页数：5

共 16 条

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[7] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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