TEMPERATURE-DEPENDENCE OF THE INTERVALLEY RELAXATION-TIME OF N-TYPE SILICON

被引：0
作者：
GINTILAS, SZ
DENIS, VI
MARTUNAS, ZI
SHETKUS, AP
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 02期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：201 / 202
页数：2
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