TEMPERATURE-DEPENDENCE OF THE INTERVALLEY RELAXATION-TIME OF N-TYPE SILICON

被引：0
作者：
GINTILAS, SZ
DENIS, VI
MARTUNAS, ZI
SHETKUS, AP
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：201 / 202
页数：2
相关论文
共 50 条
[21]   TEMPERATURE-DEPENDENCE OF THE HOLE LIFETIME IN N-TYPE GAP [J].
DIMITRIADIS, CA .
SOLID STATE COMMUNICATIONS, 1984, 52 (03) :279-281
[22]   DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J].
LI, SS ;
THURBER, WR .
SOLID-STATE ELECTRONICS, 1977, 20 (07) :609-616
[23]   TEMPERATURE-DEPENDENCE OF THE RELAXATION-TIME OF THE WAVEFUNCTION PHASE IN ANTIMONY-DOPED GERMANIUM [J].
POLYANSKAYA, TA ;
KRUKOVSKAYA, LP ;
SHMARTSEV, YV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01) :95-97
[24]   TEMPERATURE-DEPENDENCE OF THE SPIN SPIN RELAXATION-TIME OF NMR IN FERROMAGNETIC CRBR(3) [J].
TULIN, VA ;
VUORIMYAKI, AN ;
YULINEN, EE ;
PUNKKINEN, M .
JETP LETTERS, 1992, 55 (09) :541-545
[25]   TEMPERATURE-DEPENDENCE OF THE ORDER-PARAMETER RELAXATION-TIME OF A SUPERCONDUCTING INDIUM FILM [J].
WEISSBROD, H ;
GROSS, R ;
HUEBENER, RP .
SOLID STATE COMMUNICATIONS, 1986, 60 (02) :147-149
[26]   DYNAMICS OF TRIPLET EXCITONS IN MOLECULAR PAIRS - TEMPERATURE-DEPENDENCE OF TRANSVERSE RELAXATION-TIME [J].
REINEKER, P ;
KOHLER, J ;
SCHMID, U ;
SILBEY, R .
JOURNAL OF CHEMICAL PHYSICS, 1985, 83 (02) :623-627
[27]   VISCOELASTIC RELAXATION OF BILAYER LIPID-MEMBRANES .2. TEMPERATURE-DEPENDENCE OF RELAXATION-TIME [J].
EARNSHAW, JC ;
CRAWFORD, GE .
BIOPHYSICAL JOURNAL, 1989, 55 (05) :1017-1021
[28]   TEMPERATURE-DEPENDENCE OF FOWLER-NORDHEIM INJECTION FROM ACCUMULATED N-TYPE SILICON INTO SILICON DIOXIDE [J].
SUNE, J ;
LANZONI, M ;
OLIVO, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :1017-1019
[29]   ENERGY RELAXATION AND INTERVALLEY RELAXATION OF HOT ELECTRONS IN N-TYPE GERMANIUM [J].
SEEGER, K ;
SCHWEITZ.D .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 :415-&
[30]   CARRIER-DENSITY DEPENDENCE OF THE PHENOMENOLOGICAL RELAXATION-TIME OF THE ELECTRON-ENERGY IN N-TYPE SI [J].
ASHMONTAS, SP ;
OLEKAS, AP .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (03) :321-323
12345